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| VLZ-Series Vishay Semiconductors Small Signal Zener Diodes Features * * * * * * * Very sharp reverse characteristic Low reverse current level e2 Very high stability Low noise High reliability Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 9612009 Applications * Voltage stabilization Mechanical Data Case: QuadroMELF glass case SOD80 Weight: approx. 34 mg Cathode band color: black Packaging codes/options: GS18/10 k per 13" reel (8 mm tape), 10 k/box GS08/2.5 k per 7" reel (8 mm tape), 12.5 k/box Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Power dissipation Z-current Junction temperature Storage temperature range Test condition RthJA 300 K/W Symbol Ptot IZ Tj Tstg Value 500 Ptot/VZ 175 - 65 to + 175 Unit mW mA C C Thermal Characteristics Tamb = 25 C, unless otherwise specified Parameter Junction to ambient air Test condition on PC board 50 mm x 50 mm x 1.6 mm Symbol RthJA Value 500 Unit K/W Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Forward voltage Test condition IF = 200 mA Symbol VF Min Typ. Max 1.5 Unit V Document Number 81759 Rev. 1.0, 15-Aug-07 www.vishay.com 1 VLZ-Series Vishay Semiconductors Electrical Characteristics Zener Voltage Partnumbergroup VLZ2V4 VLZ2V7 VLZ3V0 VLZ3V3 VLZ3V6 VLZ3V9 Partnumber VLZ2V4A VLZ2V4B VLZ2V7A VLZ2V7B VLZ3V0A VLZ3V0B VLZ3V3A VLZ3V3B VLZ3V6A VLZ3V6B VLZ3V9A VLZ3V9B VLZ4V3A VLZ4V3 VLZ4V3B VLZ4V3C VLZ4V7A VLZ4V7 VLZ4V7B VLZ4V7C VLZ5V1A VLZ5V1 VLZ5V1B VLZ5V1C VLZ5V6A VLZ5V6 VLZ5V6B VLZ5V6C VLZ6V2A VLZ6V2 VLZ6V2B VLZ6V2C VLZ6V8A VLZ6V8 VLZ6V8B VLZ6V8C VLZ7V5A VLZ7V5 VLZ7V5B VLZ7V5C VLZ8V2A VLZ8V2 VLZ8V2B VLZ8V2C VLZ9V1A VLZ9V1 VLZ9V1B VLZ9V1C VLZ10A VLZ10 VLZ10B VLZ10C VLZ10D VLZ11A VLZ11 VLZ11B VLZ11C VZ at IZT V min 2.33 2.43 2.54 2.69 2.85 3.01 3.16 3.32 3.455 3.6 3.74 3.89 4.04 4.17 4.3 4.44 4.55 4.68 4.81 4.94 5.09 5.28 5.45 5.61 5.78 5.96 6.12 6.29 6.49 6.66 6.85 7.07 7.29 7.53 7.78 8.03 8.29 8.57 8.83 9.12 9.41 9.7 9.94 10.18 10.5 10.82 V max 2.52 2.63 2.75 2.91 3.07 3.22 3.38 3.53 3.695 3.845 4.01 4.16 4.29 4.43 4.57 4.68 4.8 4.93 5.07 5.2 5.37 5.55 5.73 5.91 6.09 6.27 6.44 6.63 6.83 7.01 7.22 7.45 7.67 7.92 8.19 8.45 8.73 9.01 9.3 9.59 9.9 10.2 10.44 10.71 11.05 11.38 Dynamic Resistance ZZ at IZT max 100 100 100 100 80 80 70 70 60 60 50 50 40 40 40 25 25 25 20 20 20 13 13 13 10 10 10 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 10 10 10 ZZK at IZK max 2000 2000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 900 900 900 800 800 800 500 500 500 300 300 300 150 150 150 120 120 120 120 120 120 120 120 120 120 120 120 120 120 120 120 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 10 10 10 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 Test Current IZT mA IZK mA A max 70 70 50 50 50 10 10 10 5 5 3 3 3 3 3 10 6 3 2 2 2 1 1 1 3 3 3 2 2 2 3 3 3 7.5 7.5 7.5 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 2 2 2 2 2 2 2 2 2 4 4 4 4 4 4 6.5 6.73 6.93 7.15 7.39 7.63 7.88 8.14 8.39 8.66 8.94 9.22 9.44 9.67 9.98 10.28 Reverse Leakage Current IR at VR V www.vishay.com 2 Document Number 81759 Rev. 1.0, 15-Aug-07 VLZ-Series Vishay Semiconductors Zener Voltage Partnumbergroup Partnumber VLZ12A VLZ12 VLZ12B VLZ12C VLZ13A VLZ13 VLZ13B VLZ13C VLZ15A VLZ15 VLZ15B VLZ15C VLZ16A VLZ16 VLZ16B VLZ16C VLZ18A VLZ18 VLZ18B VLZ18C VLZ20A VLZ20 VLZ20B VLZ20C VLZ20D VLZ22A VLZ22 VLZ22B VLZ22C VLZ22D VLZ24A VLZ24 VLZ24B VLZ24C VLZ24D VLZ27A VLZ27 VLZ27B VLZ27C VLZ27D VLZ30A VLZ30 VLZ30B VLZ30C VLZ30D VLZ33A VLZ33 VLZ33B VLZ33C VLZ33D VLZ36A VLZ36 VLZ36B VLZ36C VLZ36D VZ at IZT V min 11.13 11.44 11.74 12.11 12.55 12.99 13.44 13.89 14.35 14.8 15.25 15.69 16.22 16.82 17.42 18.02 18.63 19.23 19.72 20.15 20.64 21.08 21.52 22.05 22.61 23.12 23.63 24.26 24.97 25.63 26.29 26.99 27.7 28.36 29.02 29.68 30.32 30.9 31.49 32.14 32.79 33.4 34.01 V max 11.71 12.03 12.35 12.75 13.21 13.66 14.13 14.62 15.09 15.57 16.04 16.51 17.06 17.7 18.33 18.96 19.59 20.22 20.72 21.2 21.71 22.17 22.63 23.18 23.77 24.31 24.85 25.52 26.26 26.95 27.64 28.39 29.13 29.82 30.51 31.22 31.88 32.5 33.11 33.79 34.49 35.13 35.77 Dynamic Resistance ZZ at IZT max 12 12 12 14 14 14 16 16 16 18 18 18 23 23 23 28 28 28 28 30 30 30 30 35 35 35 35 45 45 45 45 55 55 55 55 65 65 65 65 75 75 75 75 ZZK at IZK max 110 110 110 110 110 110 110 110 110 150 150 150 150 150 150 200 200 200 200 200 200 200 200 200 200 200 200 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 Test Current IZT mA IZK mA A max 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 10.6 10.9 11.2 11.5 11.9 12.3 12.8 13.2 13.6 14.1 14.5 14.9 15.4 16 16.5 17.1 17.7 18.3 18.7 19.1 19.6 20 20.4 20.9 21.5 22 22.4 23 23.7 24.3 25 25.6 26.3 26.9 27.6 28.2 28.8 29.4 29.9 30.5 31.2 31.7 32.3 Reverse Leakage Current IR at VR V Document Number 81759 Rev. 1.0, 15-Aug-07 www.vishay.com 3 VLZ-Series Vishay Semiconductors Zener Voltage Partnumbergroup Partnumber VLZ39A VLZ39B VLZ39C VLZ39 VLZ39D VLZ39E VLZ39F VLZ39G VLZ43 VLZ47 VLZ51 VLZ56 VLZ43 VLZ47 VLZ51 VLZ56 VZ at IZT V min 34.68 35.36 36 36.63 37.36 38.14 38.94 40 44 48 53 V max 36.47 37.19 37.85 38.52 39.29 40.11 40.8 45 49 54 60 Dynamic Resistance ZZ at IZT max 85 85 85 85 85 85 85 90 90 100 100 ZZK at IZK max 250 250 250 250 250 250 250 5 5 5 5 5 5 5 5 5 5 5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 Test Current IZT mA IZK mA A max 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 32.9 33.6 34.2 34.8 35.5 36.2 37 38 41.8 45.6 50.4 Reverse Leakage Current IR at VR V Typical Characteristics Tamb = 25 C, unless otherwise specified 600 500 400 300 200 100 0 0 VZtn - Relative Voltage Change 1.3 VZtn = VZt/VZ (25 C) Ptot - Total Power Dissipation (mW) 1.2 1.1 1.0 0.9 0.8 - 60 TKVZ = 10 x 10-4/K 8 x 10-4/K 6 x 10-4/K 4 x 10-4/K 2 x 10-4/K 0 - 2 x 10-4/K - 4 x 10-4/K 95 9602 80 120 160 200 40 Tamb - Ambient Temperature (C) 95 9599 0 60 120 180 240 Tj - Junction Temperature (C) Figure 1. Total Power Dissipation vs. Ambient Temperature Figure 3. Typical Change of Working Voltage vs. Junction Temperature 1000 VZ - Voltage Change (mV) TKVZ - Temperature Coefficient of VZ (10-4/K) 15 Tj = 25 C 10 100 5 IZ = 5 mA IZ = 5 mA 10 0 1 0 95 9598 -5 0 95 9600 5 10 15 20 25 10 VZ - Z-Voltage (V) 20 40 30 VZ - Z-Voltage (V) 50 Figure 2. Typical Change of Working Voltage under Operating Conditions at Tamb = 25C Figure 4. Temperature Coefficient of Vz vs. Z-Voltage www.vishay.com 4 Document Number 81759 Rev. 1.0, 15-Aug-07 VLZ-Series Vishay Semiconductors 200 CD - Diode Capacitance (pF) 50 40 VR = 2 V IZ - Z-Current (mA) 150 Tj = 25 C Ptot = 500 mW Tamb = 25 C 30 20 10 0 15 100 50 0 0 95 9601 5 10 15 20 25 20 25 30 35 VZ - Z-Voltage (V) 95 9607 VZ - Z-Voltage (V) Figure 5. Diode Capacitance vs. Z-Voltage Figure 8. Z-Current vs. Z-Voltage 100 10 Tj = 25 C 1000 rZ - Differential Z-Resistance () IF - Forward Current (mA) IZ = 1 mA 100 5 mA 1 0.1 0.01 0.001 0 10 10 mA 1 Tj = 25 C 0.2 0.4 0.6 0.8 1.0 95 9606 0 5 10 15 20 25 95 9605 VF - Forward Voltage (V) VZ - Z-Voltage (V) Figure 6. Forward Current vs. Forward Voltage Figure 9. Differential Z-Resistance vs. Z-Voltage 100 80 IZ - Z-Current (mA) Ptot = 500 mW Tamb = 25 C 60 40 20 0 0 4 95 9604 12 6 8 VZ - Z-Voltage (V) 20 Figure 7. Z-Current vs. Z-Voltage Document Number 81759 Rev. 1.0, 15-Aug-07 www.vishay.com 5 VLZ-Series Vishay Semiconductors Zthp - Thermal Resistance for Pulse Cond. (KW) 1000 tP/T = 0.5 100 tP/T = 0.2 Single Pulse 10 tP/T = 0.1 tP/T = 0.02 iZM = (- VZ + (VZ2 + 4rzj x T/Zthp) 1/2)/(2rzj) 100 101 tP - Pulse Length (ms) 102 95 9603 RthJA = 300 K/W T = Tjmax - Tamb tP/T = 0.01 tP/T = 0.05 1 10-1 Figure 10. Thermal Response Package Dimensions in millimeters (inches): QuadroMELF SOD80 96 12071 www.vishay.com 6 Document Number 81759 Rev. 1.0, 15-Aug-07 VLZ-Series Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 81759 Rev. 1.0, 15-Aug-07 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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